PCA9559PWDH datasheet(6/11 Pages) PHILIPS

Part #	PCA9559PWDH

Description	5-bit multiplexed/1-bit latched 6-bit I2C EEPROM

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product data

PCA9559

5-bit multiplexed/1-bit latched 6-bit

I2C EEPROM DIP switch

2003 Jun 27

6

DC CHARACTERISTICS

LIMITS

SYMBOL

PARAMETER

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Supply

VCC

Supply voltage

3

—

3.8

V

ICCL

Supply current

Operating mode ALL inputs = 0 V

—

10

mA

ICCH

Supply current

Operating mode ALL inputs = VCC

—

600

µA

VPOR

Power-on reset voltage

no load; VI = VCC or GND

—

1.9

2.6

V

Input SCL: Input/Output SDA

VIL

LOW-level input voltage

-0.5

—

0.8

V

VIH

HIGH-level input voltage

2

—

VCC + 0.5

V

IOL

LOW-level output curret

VOL = 0.4 V

3

—

mA

IOL

LOW-level output curret

VOL = 0.6 V

6

—

mA

IIH

Leakage current HIGH

VI = VCC

-1.5

—

-12

µA

IIL

Leakage current LOW

VI = GND

-7

—

-32

µA

CI

Input capacitance

—

10

pF

OVERRIDE_N, WP, MUX_SELECT

IIH

Leakage current HIGH

VI = VCC

-20

—

-100

µA

IIL

Leakage current LOW

VI = GND

-86

—

-267

µA

CI

Input capacitance

—

10

pF

MUX_IN A

⇒ E

IIH

Leakage current HIGH

VI = VCC

-0.166

—

-0.75

mA

IIL

Leakage current LOW

VI = GND

-0.72

—

-2

mA

CI

Input capacitance

—

10

pF

A0, A1 Inputs

IIH

Leakage current HIGH

VI = VCC

-1

—

1

µA

IIL

Leakage current LOW

VI = GND

-1

—

1

µA

CI

Input capacitance

—

10

pF

MUX_OUT E

⇒ A

VOL

LOW-level output curret

IOL = 100 µA

—

0.4

V

VOL

LOW-level output curret

IOL = 2 mA

—

0.7

V

NON_MUXED_OUT

VOL

LOW-level output curret

IOL = 100 µA

—

0.4

V

VOL

LOW-level output curret

IOL = 2 mA

—

0.7

V

NOTES:

1. VHYS is the hysteresis of Schmitt-Trigger inputs

NON-VOLATILE STORAGE SPECIFICATIONS

PARAMETER

SPECIFICATION

Memory cell data retention

10 years min

Number of memory cell write cycles

100,00 cycles min

Application Note AN250 I2C DIP Switch provides additional information on memory cell data retention and the minimum number of write cycles.

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