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MOC3162-M Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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MOC3162-M Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page 6/15/05 Page 3 of 10 © 2005 Fairchild Semiconductor Corporation 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER (600V PEAK) MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M *Typical values at TA = 25°C Notes 1. Test voltage must be applied within dv/dt rating. 2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (15 mA for MOC3061-M, 10 mA for MOC3062-M & MOC3162-M, 5 mA for MOC3063-M & MOC3163-M) and absolute max IF (60 mA). 3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. 4. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device Min Typ* Max Units EMITTER Input Forward Voltage IF = 30 mA VF All 1.3 1.5 V Reverse Leakage Current VR = 6 V IR All 0.005 100 µA DETECTOR Peak Blocking Current, Either Direction VDRM = 600V, IF = 0 (note 1) IDRM1 MOC316X-M 10 100 nA MOC306X-M 10 500 Critical Rate of Rise of Off-State Voltage IF = 0 (figure 9, note 3) dv/dt MOC306X-M 600 1500 V/µs MOC316X-M 1000 TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device Min Typ* Max Units LED Trigger Current (rated IFT) main terminal Voltage = 3V (note 2) IFT MOC3061-M 15 mA MOC3062-M/ MOC3162-M 10 MOC3063-M/ MOC3163-M 5 Peak On-State Voltage, Either Direction ITM = 100 mA peak, IF = rated IFT VTM All 1.8 3 V Holding Current, Either Direction IH All 500 µA ZERO CROSSING CHARACTERISTICS Characteristics Test Conditions Symbol Device Min Typ* Max Units Inhibit Voltage (MT1-MT2 voltage above which device will not trigger) IF = Rated IFT VINH MOC3061-M/2M/3M 12 20 V MOC3162-M/3M 12 15 Leakage in Inhibited State IF = Rated IFT, VDRM = 600V, off state IDRM2 All 150 500 µA ISOLATION CHARACTERISTICS Characteristics Test Conditions Symbol Device Min Typ* Max Units Isolation Voltage f = 60 Hz, t = 1 sec VISO All 7500 V |
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