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KSP2907A Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # KSP2907A
Description  PNP General Purpose Amplifier
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

KSP2907A Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSP2907A Rev. E
tm
September 2006
KSP2907A
PNP General Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO= 60V
• Collector Power Dissipation: PC (max)=625mW
• Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)
• Available as PN2907A
Absolute Maximum Ratings * T
a = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T
a=25°C unless otherwise noted
Note1. Infinite heat sink.
Note2. Minimum Land pad size.
Electrical Characteristics * T
a = 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width
≤300us, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector current
-600
mA
TJ
Junction Temperature
+150
°C
Tstg
Storage Temperature
-55 ~ +150
°C
Symbol
Parameter
Max
Units
PC
Collector Power Dissipation, by RθJA
625
mW
RθJC
Thermal Resistance, Junction to Case(note1)
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient(note2)
200
°C/W
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
V(BR)CBO
Collector-Base Breakdown Voltage
IC = -10µA, IE = 0
-60
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = -10mA, IB = 0
-60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = -10µA, IC = 0
-5.0
V
ICBO
Collector Cutoff Current
VCB = -50V, IE = 0
-10
nA
hFE
DC Current Gain
VCE = -10V, IC = -0.1mA,
VCE = -10V, IC = -1mA,
VCE = -10V, IC = -10mA,
VCE = -10V, IC = -150mA,
VCE = -10V, IC = -500mA,
75
100
100
100
50
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
-0.4
-1.6
V
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
-1.3
-2.6
V
V
Cobo
Output Capacitance
VCB = -10V, IE = 0, f = 1.0MHz
8
pF
fT
Current Gain Bandwidth Product
IC = -50mA, VCE = -20V,
f = 100MHz
200
MHz
tON
Turn On Time
VCC= -30V, IC = -150mA, IB1= -15mA
45
ns
tOFF
Turn Off Time
VCC= -6V, IC = -150mA,IB1= IB1 = -15mA
100
ns
KSP2907A
: 1. Emitter 2. Base
3. Collector
KSP2907AC : 1. Emitter 2. Collector 3. Base
TO-92
1 2 3


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