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KSP2907A Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSP2907A Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSP2907A Rev. E tm September 2006 KSP2907A PNP General Purpose Amplifier Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base) • Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector) • Available as PN2907A Absolute Maximum Ratings * T a = 25°C unless otherwise noted * 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T a=25°C unless otherwise noted Note1. Infinite heat sink. Note2. Minimum Land pad size. Electrical Characteristics * T a = 25°C unless otherwise noted * DC Item are tested by Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector current -600 mA TJ Junction Temperature +150 °C Tstg Storage Temperature -55 ~ +150 °C Symbol Parameter Max Units PC Collector Power Dissipation, by RθJA 625 mW RθJC Thermal Resistance, Junction to Case(note1) 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient(note2) 200 °C/W Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)CBO Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -60 V V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = -10µA, IC = 0 -5.0 V ICBO Collector Cutoff Current VCB = -50V, IE = 0 -10 nA hFE DC Current Gain VCE = -10V, IC = -0.1mA, VCE = -10V, IC = -1mA, VCE = -10V, IC = -10mA, VCE = -10V, IC = -150mA, VCE = -10V, IC = -500mA, 75 100 100 100 50 300 VCE(sat) Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -0.4 -1.6 V V VBE(sat) Base-Emitter Saturation Voltage IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -1.3 -2.6 V V Cobo Output Capacitance VCB = -10V, IE = 0, f = 1.0MHz 8 pF fT Current Gain Bandwidth Product IC = -50mA, VCE = -20V, f = 100MHz 200 MHz tON Turn On Time VCC= -30V, IC = -150mA, IB1= -15mA 45 ns tOFF Turn Off Time VCC= -6V, IC = -150mA,IB1= IB1 = -15mA 100 ns KSP2907A : 1. Emitter 2. Base 3. Collector KSP2907AC : 1. Emitter 2. Collector 3. Base TO-92 1 2 3 |
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