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PBYR745F Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR745F Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes PBYR745F, PBYR745X series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 40 V/ 45 V • Reverse surge capability • High thermal cycling performance I F(AV) = 7.5 A • Isolated mounting tab V F ≤ 0.57 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR745F series is supplied in the SOD100 package. The PBYR745X series is supplied in the SOD113 package. PINNING SOD100 SOD113 PIN DESCRIPTION 1 cathode 2 anode tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR7 40F 45F PBYR7 40X 45X V RRM Peak repetitive reverse - 40 45 V voltage V RWM Working peak reverse - 40 45 V voltage V R Continuous reverse voltage T hs ≤ 103 ˚C - 40 45 V I F(AV) Average rectified forward square wave; δ = 0.5; T hs ≤ 123 ˚C - 7.5 A current I FRM Repetitive peak forward square wave; δ = 0.5; T hs ≤ 123 ˚C - 15 A current I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C k a 12 12 case 12 case July 1998 1 Rev 1.200 |
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