©2006 Fairchild Semiconductor Corporation

1

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KSC1008 Rev. B

tm

September 2006

KSC1008

NPN Epitacial Silicon Transistor

Features

• Low frequency amplifier medium speed switching.

• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)

• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)

• Complement to KSA708

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* DC Item are tested by Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

Symbol

Parameter

Value

Units

Collector-Base Voltage

80

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

8

V

Collector current

700

mA

Collector Power Dissipation

800

mW

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

80

V

Collector-Emitter Breakdown Voltage

60

V

Emitter-Base Breakdown Voltage

8

V

Collector Cut-off Current

0.1

µA

Emitter Cut-off Current

0.1

µA

DC Current Gain

40

400

Collector-Emitter Saturation Voltage

0.2

0.4

V

Base-Emitter Saturation Voltage

0.86

1.1

V

Current Gain Bandwidth Product

30

50

MHz

Output Capacitance

8

pF

Classification

R

O

Y

G

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

KSC1008

: 1. Emitter 2. Base

3. Collector

KSC1008C : 1. Emitter 2. Collector 3. Base

TO-92

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