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NX6306 Datasheet(PDF) 1 Page - California Eastern Labs

Part No. NX6306
Description  1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
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Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com
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NEC's 1310 nm InGaAsP MQW DFB
LASER DIODE IN CAN PACKAGE
FOR 155 Mb/s and 622 Mb/s APPLICATIONS
NX6306 SERIES
FEATURES
• OPTICAL OUTPUT POWER:
Po = 5.0 mW
• LOW THRESHOLD CURRENT:
lth = 10 mA @ TC = 25°C
• HIGH SPEED:
tr, tf = 0.5 ns MAX.
• 40% REDUCTION OF MOUNTING AREA:
5-pin SOP × 2
• SIDE MODE SUPPRESSION RATIO:
SWSR = 45 dB @ TYP.
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
φ
5.6 mm
• BASED ON TELCORDIA RELIABILITY
DESCRIPTION
NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well
(MQW) structured Distributed Feed-Back (DFB) laser diode
with InGaAs monitor PIN-PD.
This device is ideal for Gigabit Ethernet and Synchronous
Digital Hierarchy (SDH) system STM-1 (I-1, S-1.1, L-1.1),
STM-4 (I-4, S-4.1, L-4.1), ITU-T recommendations.
California Eastern Laboratories
APPLICATIONS
• 156 Mb/s: STM-1 (I-1, S-1.1, L-1.1)
• 622 Mb/s: STM-4 (I-4, S-4.1, L-4.1)
• 1.25 Gb/s: Gigabit Ethernet
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
PRELIMINARY DATASHEET
NX6306G Series
NX6306S Series




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