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KSA1203 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSA1203 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 5 page  ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSA1203 Rev. B3 July 2005 KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Absolute Maximum Ratings T a = 25°C unless otherwise noted * Mounted on Ceramic Board (250mm2 × 0.8mm) Electrical Characteristics T a = 25°C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A IB Base Current -0.3 A PC PC* Collector Power Dissipation 500 1,000 mW mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -30 V BVEBO Emitter-Base Breakdown Voltage IE = -1mA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = -30V, IE = 0 -100 nA IEBO Emitter Cut-off Current VBE = -5V, IC = 0 -100 nA hFE DC Current Gain VCE = -2V, IC = -500mA 100 320 VCE (sat) Collector-Emitter Saturation Voltage IC = -1.5A, IB = -30mA -2.0 V VBE (on) Base-Emitter On Voltage VCE = -2V, IC = -500mA -1.0 V fT Current Gain Bandwidth Product VCE = -2V, IC = -500mA 120 MHz Cob Output Capacitance VCB = -10V, IE = 0, f = 1MHz 50 pF SOT-89 1 1. Base 2. Collector 3. Emitter 12 0 3 PY W W hFE grage Year code Weekly code Marking |
Similar Part No. - KSA1203_05 |
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Similar Description - KSA1203_05 |
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