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STP40NF10 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP40NF10 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page STP40NF10 Electrical ratings 3/12 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (vgs = 0) 100 V VGS Gate- source voltage ±20 V ID (1) 1. Limited by wire bonding Drain current (continuous) at TC = 25°C 50 A ID Drain current (continuous) at TC = 100°C 35 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 200 A PTOT Total dissipation at TC = 25°C 150 W Derating factor 1 W/°C dv/dt(3) 3. ISD ≤50A, di/dt ≤600A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 27 V/ns EAS (4) 4. Starting Tj= 25°C, ID= 50A, VDD=25V Single pulse avalanche energy 385 mj Tstg Storage temperature – 55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case Max 1 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
Similar Part No. - STP40NF10_07 |
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Similar Description - STP40NF10_07 |
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