Electronic Components Datasheet Search |
|
KA5M0965QTU Datasheet(PDF) 3 Page - Fairchild Semiconductor |
|
KA5M0965QTU Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page KA5M0965Q 3 Electrical Characteristics (SFET Part) (Ta = 25 °C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% 2. Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50 µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max., Rating, VGS=0V -- 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125 °C - - 200 mA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=4.5A - 0.96 1.2 W Forward Transconductance (Note) gfs VDS=50V, ID=4.5A 5.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 1200 - pF Output Capacitance Coss - 135 - Reverse Transfer Capacitance Crss - 25 - Turn on Delay Time td(on) VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) -25 60 nS Rise Time tr - 75 160 Turn Off Delay Time td(off) - 130 270 Fall Time tf - 70 150 Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=9.0A, VDS=0.8BVDSS -45 60 nC Gate-Source Charge Qgs - 8 - Gate-Drain (Miller) Charge Qgd - 22 - S 1 R ---- = |
Similar Part No. - KA5M0965QTU |
|
Similar Description - KA5M0965QTU |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |