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HGTP7N60A4 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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HGTP7N60A4 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2004 Fairchild Semiconductor Corporation HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B2 Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125 oC ICE = 7A VCE = 390V VGE = 15V RG = 25Ω L = 1mH Test Circuit (Figure 20) -10 - ns Current Rise Time trI -7 - ns Current Turn-Off Delay Time td(OFF)I - 130 150 ns Current Fall Time tfI -75 85 ns Turn-On Energy (Note 2) EON1 -50 - µJ Turn-On Energy (Note 2) EON2 - 200 215 µJ Turn-Off Energy (Note 3) EOFF - 125 170 µJ Thermal Resistance Junction To Case RθJC -- 1.0 oC/W NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Electrical Specifications TJ = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME TC, CASE TEMPERATURE ( oC) 50 10 0 30 20 25 25 75 100 125 150 35 VGE = 15V 15 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700 20 0 300 400 200 100 500 600 0 30 10 40 TJ = 150 oC, R G = 25Ω, VGE = 15V, L = 100µH 1 ICE, COLLECTOR TO EMITTER CURRENT (A) 30 200 20 510 500 TJ = 125 oC, R G = 25Ω, L = 2mH, V CE = 390V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) RØJC = 1.0 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC) / (EON2 + EOFF) TC VGE 15V 75oC VGE, GATE TO EMITTER VOLTAGE (V) 10 11 12 15 4 6 14 20 80 100 140 16 13 14 8 10 12 40 60 120 VCE = 390V, RG = 25Ω, TJ = 125 oC tSC ISC HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 |
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