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HGTG7N60A4D Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part # HGTG7N60A4D
Description  600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HGTG7N60A4D Datasheet(HTML) 3 Page - Fairchild Semiconductor

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©2005 Fairchild Semiconductor Corporation
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
Diode Forward Voltage
VEC
IEC = 7A
-
2.4
-
V
Diode Reverse Recovery Time
trr
IEC = 7A, dIEC/dt = 200A/µs-
34
-
ns
IEC = 1A, dIEC/dt = 200A/µs-
22
-
ns
Thermal Resistance Junction To Case
RθJC
IGBT
-
-
1.0
oC/W
Diode
-
-
2.2
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications
TJ = 25
oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TC, CASE TEMPERATURE (
oC)
50
10
0
30
20
25
25
75
100
125
150
35
VGE = 15V
15
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
700
20
0
300
400
200
100
500
600
0
30
10
40
TJ = 150
oC, R
G = 25Ω, VGE = 15V, L = 100µH
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
30
200
20
510
500
TJ = 125
oC, R
G = 25Ω, L = 1mH, V CE = 390V
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 1.0
oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TC
VGE
15V
75oC
VGE, GATE TO EMITTER VOLTAGE (V)
10
11
12
15
4
6
14
20
80
100
140
16
13
14
8
10
12
40
60
120
VCE = 390V, RG = 25Ω, TJ = 125
oC
tSC
ISC
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS


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