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PBYR2060CTB Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBYR2060CTB Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page  Philips Semiconductors Product specification Rectifier diodes PBYR20100CT, PBYR20100CTB series Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction per diode - - 2 K/W to mounting base both diodes - - 1 K/W R th j-a Thermal resistance junction SOT78 package in free air - 60 - K/W to ambient SOT404 package, pcb mounted, minimum - 50 - K/W footprint, FR4 board ELECTRICAL CHARACTERISTICS All characteristics are per diode at T j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 10 A; Tj = 125˚C - 0.61 0.7 V I F = 20 A; Tj = 125˚C - 0.74 0.85 V I F = 20 A - 0.88 0.95 V I R Reverse current V R = VRWM - 5 150 µA V R = VRWM; Tj = 125˚C - 5 15 mA C d Junction capacitance V R = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 420 - pF November 1998 2 Rev 1.300 |
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