PBYR1045X datasheet(3/6 Pages) PHILIPS

Part #	PBYR1045X

Description	Rectifier diodes Schottky barrier

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Rectifier diodes

PBYR1045F, PBYR1045X series

Schottky barrier

Fig.1. Maximum forward dissipation P

F = f(IF(AV));

square current waveform where I

F(AV) =IF(RMS) x √D.

Fig.2. Maximum forward dissipation P

F = f(IF(AV));

sinusoidal current waveform where a = form

factor = I

F(RMS) / IF(AV).

Fig.3. Typical and maximum forward characteristic

I

F = f(VF); parameter Tj

Fig.4. Typical reverse leakage current; I

R = f(VR);

parameter T

j

Fig.5. Typical junction capacitance; C

d = f(VR);

f = 1 MHz; T

j = 25˚C to 125 ˚C.

Fig.6. Transient thermal impedance; Z

th j-hs = f(tp).

0

5

10

15

0

2

4

6

8

10

D = 1.0

0.5

0.2

0.1

PBYR1045X

Rs = 0.016 Ohms

Vo = 0.41 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Ths(max) (C)

150

139

128

117

106

95

T

I

D =

tp

T

t

0

25

50

100

10

1

0.1

0.01

Reverse current, IR (mA)

Reverse voltage, VR (V)

PBYR1045

50 C

75 C

100 C

125 C

Tj = 25 C

02468

10

0

1

2

3

4

5

6

7

8

a = 1.57

1.9

2.2

2.8

4

PBYR1045X

Rs = 0.016 Ohms

Vo = 0.41 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

Ths(max) (C)

150

139

128

117

106

1

10

100

10

1000

100

Cd / pF

VR / V

PBYR1045

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

10

20

30

40

50

PBYR1045X

Forward voltage, VF (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

0.01

0.1

1

10

PBYR1045X

1us

10us

100us

1ms

10ms

100ms

1s

10s

pulse width, tp (s)

Transient thermal impedance, Zth j-hs (K/W)

D =

tp

T

P

t

D

July 1998

3

Rev 1.200

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