FSDH0265RN, FSDM0265RN

5

Electrical Characteristics

(Ta = 25

°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300us, duty ≤ 2%

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

3. These parameters, although guaranteed, are not 100% tested in production

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

SENSE FET SECTION

Zero-Gate-Voltage Drain Current

-

-

50

µA

-

-

200

µA

-

5.0

6.0

Ω

Input Capacitance

f=1MHz

-

550

-

pF

Output Capacitance

-38-

pF

Reverse Transfer Capacitance

-17-

pF

Turn-On Delay Time

-20-

ns

Rise Time

-

15

-

ns

Turn-Off Delay Time

-55-

ns

Fall Time

-

25

-

ns

CONTROL SECTION

Switching Frequency

FSDH0265R

92

100

108

KHz

Switching Frequency Modulation

±2.0

±3.0

±4.0

KHz

Switching Frequency

FSDM0265R

61

67

73

KHz

Switching Frequency Modulation

±1.5

±2.0

±2.5

KHz

-25

°C ≤ Ta ≤ 85°C

-

±5

±10

%

Maximum Duty Cycle

FSDH0265R

71

77

83

%

FSDM0265R

62

67

72

%

Minimum Duty Cycle

00

0

%

UVLO Threshold Voltage

11

12

13

V

7

8

9

V

Feedback Source Current

0.7

0.9

1.1

mA

Internal Soft Start Time

10

15

20

ms

BURST MODE SECTION

Burst Mode Voltage

-

0.4

0.5

0.6

V

-

0.25

0.35

0.45

V

PROTECTION SECTION

Peak Current Limit

Max. inductor current

1.3

1.5

1.7

A

-

500

-

ns

Thermal Shutdown Temperature

-

125

140

-

°C

Shutdown Feedback Voltage

5.5

6.0

6.5

V

Over Voltage Protection

18

19

-

V

Shutdown Delay Current

3.5

5.0

6.5

µA

Leading Edge Blanking Time

200

-

-

ns

TOTAL DEVICE SECTION

1

3

5

mA

Start-Up Charging Current

0.7

0.85

1.0

mA

Vstr Supply Voltage

35

-

-

V