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PBYR1080 Datasheet(PDF) 1 Page - NXP Semiconductors

Part # PBYR1080
Description  Rectifier diodes Schottky barrier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1080 Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 60 V/ 80 V/ 100 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 10 A
• Low thermal resistance
V
F ≤ 0.7 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope. Intended for use as
output rectifiers in low voltage, high
1
cathode
frequency switched mode power
supplies.
2
anode
The PBYR10100 series is supplied
tab
cathode
in the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
60
80
100
V
RRM
Peak repetitive reverse
-
60
80
100
V
voltage
V
RWM
Working peak reverse
-
60
80
100
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 139 ˚C
-
60
80
100
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 133 ˚C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 133 ˚C
-
20
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
2
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
k
a
12
1
tab
2
March 1998
1
Rev 1.200


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