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PBYR1080 Datasheet(PDF) 1 Page - NXP Semiconductors |
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PBYR1080 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Product specification Rectifier diodes PBYR10100 series Schottky barrier FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop • Fast switching V R = 60 V/ 80 V/ 100 V • Reverse surge capability • High thermal cycling performance I F(AV) = 10 A • Low thermal resistance V F ≤ 0.7 V GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Schottky rectifier diodes in a plastic PIN DESCRIPTION envelope. Intended for use as output rectifiers in low voltage, high 1 cathode frequency switched mode power supplies. 2 anode The PBYR10100 series is supplied tab cathode in the conventional leaded SOD59 (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PBYR10 60 80 100 V RRM Peak repetitive reverse - 60 80 100 V voltage V RWM Working peak reverse - 60 80 100 V voltage V R Continuous reverse voltage T mb ≤ 139 ˚C - 60 80 100 V I F(AV) Average rectified forward square wave; δ = 0.5; T mb ≤ 133 ˚C - 10 A current I FRM Repetitive peak forward square wave; δ = 0.5; T mb ≤ 133 ˚C - 20 A current I FSM Non-repetitive peak forward t = 10 ms - 135 A current t = 8.3 ms - 150 A sinusoidal; T j = 125 ˚C prior to surge; with reapplied V RRM(max) I RRM Peak repetitive reverse pulse width and repetition rate - 1 A surge current limited by T j max T j Operating junction - 150 ˚C temperature T stg Storage temperature - 65 175 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction - - 2 K/W to mounting base R th j-a Thermal resistance junction in free air - 60 - K/W to ambient k a 12 1 tab 2 March 1998 1 Rev 1.200 |
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