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FDS6982AS_NF40 Datasheet(PDF) 8 Page - Fairchild Semiconductor |
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FDS6982AS_NF40 Datasheet(HTML) 8 Page - Fairchild Semiconductor |
8 / 10 page FDS6982AS Rev B Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6982AS. Figure 23. FDS6982AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6982). Figure 24. Non-SyncFET (FDS6982) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TA = 125 oC TA = 25 oC TA = 100 oC Figure 25. SyncFET body diode reverse leakage versus drain-source voltage and temperature Time: 10nS/DIV Time: 10nS/DIV |
Similar Part No. - FDS6982AS_NF40 |
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Similar Description - FDS6982AS_NF40 |
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