FDS6912A datasheet(2/5 Pages) FAIRCHILD

Part #	FDS6912A

Description	Dual N-Channel Logic Level PowerTrench MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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2 / 5 page

FDS6912A Rev D(W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250

µA

30

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 250

µA, Referenced to 25°C

25

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

VDS = 24 V, VGS = 0 V, TJ = 55

°C

1

10

µA

IGSS

Gate–Source Leakage

VGS =

±20 V, V

DS = 0 V

±100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250

µA

1

1.9

3

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = 250

µA, Referenced to 25°C

–4.5

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 6 A

VGS = 4.5 V,

ID = 5 A

VGS = 10 V, ID = 6 A,TJ = 125

°C

19

24

27

28

35

44

m

Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

20

A

gFS

Forward Transconductance

VDS = 10 V,

ID = 6 A

25

S

Dynamic Characteristics

Ciss

Input Capacitance

575

pF

Coss

Output Capacitance

145

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

65

pF

RG

Gate Resistance

VGS = 15 mV, f = 1.0 MHz

2.1

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

8

16

ns

tr

Turn–On Rise Time

5

10

ns

td(off)

Turn–Off Delay Time

23

37

ns

tf

Turn–Off Fall Time

VDD = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

Ω

3

6

ns

Qg

Total Gate Charge

5.8

8.1

nC

Qgs

Gate–Source Charge

1.7

nC

Qgd

Gate–Drain Charge

VDS = 15 V,

ID = 6 A,

VGS = 5 V

2.1

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

1.3

A

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 1.3 A

(Note 2)

0.75

1.2

V

trr

Diode Reverse Recovery Time

20

nS

Qrr

Diode Reverse Recovery Charge

IF = 6 A,

diF/dt = 100 A/µs

10

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 78°C/W when

mounted on a 0.5in

2

pad of 2 oz copper

b) 125°C/W when

mounted on a 0.02

in

2 pad of 2 oz

copper

c) 135°C/W when mounted on a

minimum mounting pad.

Scale 1 : 1 on letter size paper

Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

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