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PBSS2515VS Datasheet(PDF) 5 Page - NXP Semiconductors |
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PBSS2515VS Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 2001 Nov 07 5 Philips Semiconductors Product specification 15 V low VCEsat NPN double transistor PBSS2515VS handbook, halfpage 0 400 600 200 MLD643 10−1 110 IC (mA) hFE 102 103 (2) (1) (3) Fig.2 DC current gain as a function of collector current; typical values. VCE =2V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD645 1 10−1 IC (mA) VBE (mV) 10 102 103 (1) (3) (2) Fig.3 Base-emitter voltage as a function of collector current; typical values. VCE =2V. (1) Tamb = −55 °C. (2) Tamb =25 °C. (3) Tamb = 150 °C. handbook, halfpage 103 102 10 1 MLD647 10−1 110 IC (mA) VCEsat (mV) 102 103 (1) (3) (2) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD646 1 10−1 IC (mA) VBEsat (mV) 10 102 103 (2) (3) (1) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −55 °C. |
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