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| FDMC2610_07 |
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FDMC2610 Rev.C www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 200 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C 199 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 160V, 1 μA VGS = 0V TJ = 125°C 100 IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA 2 3.2 4 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C -9.9 mV/°C rDS(on) Drain to Source On Resistance VGS = 10V, ID = 2.2A 175 200 m Ω VGS = 6V, ID = 1.5A 188 215 VGS = 10V, ID = 2.2A , TJ = 125°C 347 397 gFS Forward Transconductance VDS = 5V, ID = 2.2A 7 S Dynamic Characteristics Ciss Input Capacitance VDS = 100V, VGS = 0V, f = 1MHz 720 960 pF Coss Output Capacitance 41 55 pF Crss Reverse Transfer Capacitance 12 20 pF Rg Gate Resistance f = 1MHz 0.7 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 100V, ID = 2.2A VGS = 10V, RGEN = 24Ω 17 31 ns tr Rise Time 13 24 ns td(off) Turn-Off Delay Time 29 47 ns tf Fall Time 16 29 ns Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 100V ID = 2.2A 12.3 18 nC Qgs Gate to Source Gate Charge 3 nC Qgd Gate to Drain “Miller” Charge 3.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.2A (Note 2) 0.8 1.2 V trr Reverse Recovery Time IF = 2.2A, di/dt = 100A/μs 69 104 ns Qrr Reverse Recovery Charge 114 171 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper |
