2N5179

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ELECTRICAL SPECIFICATIONS (Tcase = 25

ELECTRICAL SPECIFICATIONS (Tcase = 25°°C)

C)

STATIC

STATIC

(off)

(off)

Value

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

BVCEO

Collector-Emitter Sustaining Voltage

(IC = 3.0 mAdc, IB = 0)

12

-

-

Vdc

BVCBO

Collector-Base Breakdown Voltage

(IC=1.0 Adc, IE=0)

20

-

-

Vdc

BVEBO

Emitter Base Breakdown Voltage

(IE = 0.01 mAdc, IC = 0)

2.5

-

-

Vdc

ICBO

Collector Cutoff Current

(VCB = 15 Vdc, IE = 0)

-

-

.02

mA

(on)

(on)

HFE

DC Current Gain

(IC = 3.0 mAdc, VCE = 1.0 Vdc)

25

-

250

-

VBE(sat)

Base-Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

-

-

1.0

Vdc

VCE(sat)

Collector-Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

-

-

0.4

Vdc

DYNAMIC

DYNAMIC

Value

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Current-Gain - Bandwidth Product

(IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz)

900

1500

-

MHz

CCB

Collector-base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

-

-

1.0

pF

FUNCTIONAL

FUNCTIONAL

Value

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

NF

Noise Figure (figure 1)

IC = 1.5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

-

-

4.5

dB

GPE

Common-Emitter

Amplifier Power Gain

(figure 1)

IC = 1.5 mAdc, VCE = 6.0

Vdc, f = 200 MHz

20

-

-

dB