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FDFM2P110 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDFM2P110 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 7 page  August 2005 ©2005 Fairchild Semiconductor Corporation FDFM2P110 Rev. C4 (W) 1 FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Applications Buck Boost Features -3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V RDS(ON) = 200mΩ @ VGS = -2.5 V Low Profile - 0.8 mm maximun - in the new package MicroFET 3x3 mm Absolute Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Drain Current -Continuous (Note 1a) -3.5 A -Pulsed -10 VRRM Schottky Repetitive Peak Reverse voltage 20 V IO Schottky Average Forward Current (Note 1a) 2 A PD Power dissipation (Steady State) (Note 1a) (Note 1b) 2 W 0.8 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 oC RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 60 oC/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 145 oC/W Device Marking Device Reel Size Tape Width Quantity 2P110 FDFM2P110 7inch 12mm 3000 units 5 1 6 2 3 4 C/D MLP 3x3 TOP BOTTOM A A S SG D PIN 1 A S D A S G |
Similar Part No. - FDFM2P110 |
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Similar Description - FDFM2P110 |
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