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EL7531IY-T13 Datasheet(PDF) 2 Page - Intersil Corporation |
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EL7531IY-T13 Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 11 page 2 FN7428.9 July 13, 2006 IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA Absolute Maximum Ratings (TA = 25°C) VIN, VDD, PG to SGND . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V) SYNC, EN, VO, FB to SGND . . . . . . . . . . . . . -0.3V to (VIN + +0.3V) PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Operating Ambient Temperature . . . . . . . . . . . . . . . . -40°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications VDD = VIN = VEN = 3.3V, C1 = C2 = 10µF, L = 1.8µH, VO = 1.8V (as shown in Typical Application Diagram), unless otherwise specified. PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT DC CHARACTERISTICS VFB Feedback Input Voltage PWM mode 790 800 810 mV ∆VOUT/VOUT VFB vs Temperature Junction temperature = -40°C to +85°C (see Figure 7) 0.3 % ∆V OUT/VOUT Line Regulation VIN = 3.3V to 5V, IO = 1A (see Figure 7) 0.1 % ∆VOUT/VOUT Load Regulation IO = 0A to 1A, VIN = 3.3V (see Figure 7) 0.4 % IFB Feedback Input Current 100 nA VIN, VDD Input Voltage 2.5 5.5 V VIN,OFF Minimum Voltage for Shutdown VIN falling 2 2.2 V VIN,ON Maximum Voltage for Startup VIN rising 2.2 2.4 V IS Input Supply Quiescent Current Active - PFM Mode VSYNC = 0V 120 145 µA Active - PWM Mode VSYNC = 3.3V 6.5 7.5 mA IDD Supply Current PWM, VIN = VDD = 5V 400 500 µA EN = 0, VIN = VDD = 5V 0.1 1 µA RDS(ON)-PMOS PMOS FET Resistance VDD = 5V, wafer test only 70 100 m Ω RDS(ON)-NMOS NMOS FET Resistance VDD = 5V, wafer test only 45 75 m Ω ILMAX Current Limit 1.5 A TOT,OFF Over-temperature Threshold T rising 145 °C TOT,ON Over-temperature Hysteresis T falling 130 °C IEN, ISYNC EN, SYNC Current VEN, VRSI = 0V and 3.3V -1 1 µA VEN1, VSYNC1 EN, SYNC Rising Threshold VDD = 3.3V 2.4 1.8 V VEN2, VSYNC2 EN, SYNC Falling Threshold VDD = 3.3V 9 1.4 0.8 V VPG Minimum VFB for PG, WRT Targeted VFB Value VFB rising 95 % VFB falling 86 % VOLPG PG Voltage Drop ISINK = 3.3mA 35 70 mV AC CHARACTERISTICS FPWM PWM Switching Frequency 1.25 1.4 1.6 MHz tSYNC Minimum SYNC Pulse Width Guaranteed by design 25 ns tSS Soft-start Time 650 µs EL7531 |
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