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FDC6331L Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDC6331L Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  August 2001 2007 Fairchild Semiconductor Corporation FDC6331L Rev D FDC6331L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOT TM-6 package. Applications Load switch Power management Features –2.8 A, –8 V. RDS(ON) = 55 m @ VGS = –4.5 V RDS(ON) = 70 m @ VGS = –2.5 V RDS(ON) = 100 m @ VGS = –1.8 V Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) High performance trench technology for extremely low RDS(ON) D1 S2 G1 D2 S1 G2 SuperSOT -6 TM Pin 1 SuperSOT™-6 3 2 1 4 5 6 Q1 Q2 Vout,C1 Vout,C1 R2 Vin,R1 ON/O FF R1,C1 See Application Circuit Equivalent Circuit V DROP +– IN OUT ON/OFF Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VIN Maximum Input Voltage 8V VON/OFF High level ON/OFF voltage range –0.5 to 8 V ILoad Load Current – Continuous (Note 1) 2.8 A – Pulsed 9 PD Maximum Power Dissipation (Note 1) 0.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 C Thermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note 1) 180 C/W R JC Thermal Resistance, Junction-to-Case (Note 1) 60 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .331 FDC6331L 7’’ 8mm 3000 units tm April 2007 |
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