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FDC5612 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDC5612 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page FDC5612 Rev. C2 FDC5612 60V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. December 2004 © 2004 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 4.3 A Drain Current - Pulsed 20 PD Power Dissipation for Single Operation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .562 FDC5612 7’’ 8mm 3000 units Features • 4.3 A, 60 V. R DS(ON) = 0.055 Ω @ V GS = 10 V R DS(ON) = 0.064 Ω @ V GS = 6 V • Low gate charge (12.5nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). 5 6 4 1 2 3 SuperSOTTM-6 S D D D D G |
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