FCA47N60 datasheet(3/10 Pages) FAIRCHILD

Part #	FCA47N60

Description	new generation of high voltage MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FCH47N60 / FCA47N60 Rev. B

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250μs Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

24

6

8

10

0

10

1

10

2

* Note

1. V

DS = 40V

2. 250μs Pulse Test

-55

oC

150

oC

25

oC

V

GS , Gate-Source Voltage [V]

0

20

40

60

80

100

120

140

160

180

200

0.00

0.05

0.10

0.15

0.20

V

GS = 20V

V

GS = 10V

* Note : T

J = 25

oC

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

0

10

1

10

2

25

oC

150

oC

* Notes :

1. V

GS = 0V

2. 250μs Pulse Test

V

SD , Source-Drain Voltage [V]

10

-1

10

0

10

1

0

5000

10000

15000

20000

25000

30000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

50

100

150

200

250

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

* Note : I

D = 47A

Q

G, Total Gate Charge [nC]

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