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ISL22449WFV14Z Datasheet(PDF) 4 Page - Intersil Corporation |
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ISL22449WFV14Z Datasheet(HTML) 4 Page - Intersil Corporation |
4 / 12 page 4 FN6333.2 September 15, 2006 Operating Specifications Over the recommended operating conditions unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS MIN TYP (NOTE 5) MAX UNIT ICC1 VCC Supply Current (volatile write/read) VCC = +3.6V, 10k DCP, fSPI = 5MHz; (for SPI active, read and write states) 2.5 mA VCC Supply Current (volatile write/read) VCC = +3.6V, 50k DCP, fSPI = 5MHz; (for SPI active, read and write states) 0.65 mA ICC2 VCC Supply Current ( non-volatile write/read) VCC = +5.5V, 10k DCP, fSPI = 5MHz; (for SPI active, read and write states) 4.0 mA VCC Supply Current ( non-volatile write/read) VCC = +5.5V, 50k DCP, fSPI = 5MHz; (for SPI active, read and write states) 3.0 mA ISB VCC Current (standby) VCC = +5.5V, 10k DCP, SPI interface in standby state 2.4 mA VCC = +5.5V, 50k DCP, SPI interface in standby state 525 µA VCC = +3.6V, 10k DCP, SPI interface in standby state 1.6 mA VCC = +3.6V, 50k DCP, SPI interface in standby state 350 µA ISD VCC Current (shutdown) VCC = +5.5V @ +85°C, SPI interface in standby state 5µA VCC = +5.5V@ +125°C, SPI interface in standby state 6.5 µA VCC = +3.6V @ +85°C, SPI interface in standby state 4µA VCC = +3.6V @ +125°C, SPI interface in standby state 5.5 µA ILkgDig Leakage current, at pins SHDN, SCK, SDI, SDO and CS Voltage at pin from GND to VCC -1 1 µA tWRT (Note 15) DCP wiper response time SCK falling edge of last bit of DCP data byte to wiper new position 1.5 µs tShdnRec (Note 15) DCP recall time from shutdown mode From rising edge of SHDN signal to wiper stored position and RH connection 1.5 µs SCK rising edge of last bit of ACR data byte to wiper stored position and RH connection 1.5 µs Vpor Power-on recall voltage Minimum VCC at which memory recall occurs 2.0 2.6 V VccRamp Vcc ramp rate 0.2 V/ms tD Power-up delay VCC above Vpor, to DCP Initial Value Register recall completed, and SPI Interface in standby state 3ms EEPROM SPECIFICATION EEPROM Endurance 1,000,000 Cycles EEPROM Retention Temperature T < +55°C 50 Years tWC (Note 13) Non-volatile Write cycle time 12 20 ms SERIAL INTERFACE SPECIFICATIONS VIL SHDN, SCK, SDI, and CS input buffer LOW voltage -0.3 0.3*VCC V VIH SHDN, SCK, SDI, and CS input buffer HIGH voltage 0.7*VCC VCC+0.3 V ISL22449 |
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