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ISL22349UFV14Z Datasheet(PDF) 4 Page - Intersil Corporation |
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ISL22349UFV14Z Datasheet(HTML) 4 Page - Intersil Corporation |
4 / 12 page 4 FN6331.2 September 15, 2006 Operating Specifications Over the recommended operating conditions unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS MIN TYP (NOTE 5) MAX UNIT ICC1 VCC Supply Current (volatile write/read) VCC = +3.6V, 10k DCP, fSCL = 400kHz; (for I2C active, read and write states) 2.5 mA VCC Supply Current (volatile write/read, non-volatile read) VCC = +3.6V, 50k DCP, fSCL = 400kHz; (for I2C active, read and write states) 0.65 mA ICC2 VCC Supply Current (non-volatile write/read) VCC = +5.5V, 10k DCP, fSCL = 400kHz; (for I2C active, read and write states) 4.0 mA VCC Supply Current (non-volatile write/read) VCC = +5.5V, 50k DCP, fSCL = 400kHz; (for I2C active, read and write states) 3.0 mA ISB VCC Current (standby) VCC = +5.5V, 10k DCP, I 2C interface in standby state 2.4 mA VCC = +3.6V, 10k DCP, I 2C interface in standby state 525 µA VCC = +5.5V, 50k DCP, I 2C interface in standby state 1.6 mA VCC = +3.6V, 50k DCP, I 2C interface in standby state 350 µA ISD VCC Current (shutdown) VCC = +5.5V @ +85°C, I 2C interface in standby state 5µA VCC = +5.5V @ +125°C, I 2C interface in standby state 6.5 µA VCC = +3.6V @ +85°C, I 2C interface in standby state 4µA VCC = +3.6V @ +125°C, I 2C interface in standby state 5.5 µA ILkgDig Leakage Current, at Pins A0, A1, A2, SHDN, SDA, and SCL Voltage at pin from GND to VCC -1 1 µA tWRT (Note 13) DCP Wiper Response Time SCL falling edge of last bit of DCP data byte to wiper new position 1.5 µs tShdnRec (Note 13) DCP Recall Time from Shutdown Mode From rising edge of SHDN signal to wiper stored position and RH connection 1.5 µs SCL falling edge of last bit of ACR data byte to wiper stored position and RH connection 1.5 µs Vpor Power-on Recall Voltage Minimum VCC at which memory recall occurs 2.0 2.6 V VccRamp VCC Ramp Rate 0.2 V/ms tD Power-up Delay Vcc above Vpor, to DCP Initial Value Register recall completed, and I2C Interface in standby state 3ms EEPROM SPECIFICATION EEPROM Endurance 1,000,000 Cycles EEPROM Retention Temperature T < +55°C 50 Years tWC (Note 14) Non-volatile Write Cycle Time 12 20 ms ISL22349 |
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