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NE5521D Datasheet(PDF) 1 Page - NXP Semiconductors |
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NE5521D Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Linear Products Product specification NE/SA/SE5521 LVDT signal conditioner 901 August 31, 1994 853-0043 13721 DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the primary of the LVDT/RVDT, a synchronous demodulator to convert the LVDT/RVDT output amplitude and phase to position information, and an output amplifier to provide amplification and filtering of the demodulated signal. FEATURES • Low distortion • Single supply 5V to 20V, or dual supply ±2.5V to ±10V • Oscillator frequency 1kHz to 20kHz • Capable of ratiometric operation • Low power consumption (182mV typ) APPLICATIONS • LVDT signal conditioning • RVDT signal conditioning • LPDT signal conditioning • Bridge circuits PIN CONFIGURATIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 16 15 1 2 3 4 5 6 7 8 11 12 13 14 15 16 18 17 9 10 AMP OUT +IN –IN LVDT IN DEMOD OUT SYNC GND N.C. N.C. V+ CT VREF FEEDBACK OSC OSC VREF/2 RT N.C. AMP OUT +IN –IN LVDT IN DEMOD OUT SYNC GND N.C. V+ CT VREF FEEDBACK OSC OSC VREF/2 RT F, N Packages TOP VIEW D1 Package TOP VIEW NOTE: 1. SOL — released in large SO package only. ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 18-Pin Plastic Dual In-Line Package (DIP) 0 to +70 °C NE5521N 0407A 16-Pin Small Outline Large (SOL) Package 0 to +70 °C NE5521D 0171B 18-Pin Plastic Dual In-Line Package (DIP) –40 to +85 °C SA5521N 0407A 18-Pin Ceramic Dual In-Line Package (CERDIP) –55 to +125 °C SE5521F 0583A 16-Pin Ceramic Dual In-Line Package (CERDIP) –40 to +85 °C SA5521D 0582B ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VCC Supply voltage +20 V Split supply voltage ±10 V TA Operating temperature range NE5521 SA5521 SE5521 0 to 70 –40 to +85 –55 to +125 °C °C °C TSTG Storage temperature range –65 to +125 °C PD Power dissipation1 910 mW NOTES: 1. For derating, see typical power dissipation versus load curves (Figure 1). |
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