18.0-30.0 GHz GaAs Receiver

QFN, 7x7 mm

R1002-QB

Page 5 of 10

power performance. Low noise bias is nominally Vd=4.5V, Id=135mA and is the recommended bias condition. More controlled

performance will be obtained by separately biasing Vd1 and Vd2 each at 4.5V, 65mA. Power bias may be as high as Vd=5.5V,

Id=270mA with all stages in parallel, or most controlled performance will be obtained by separately biasing Vd1 and Vd2 each at 5.5V,

135mA. Attenuator bias, Vg3, can be adjusted from 0.0 to -1.2V with 0.0V providing maximum attenuation and -1.2V providing

minimum attenuation. Image reject mixer bias, Vg4, should nominally be -0.8V to minimize sensitivity of mixer performance to LO

level. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the

most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a

single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the

current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed

to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the

applied voltage to ensure negative gate bias is available before applying the positive drain supply.

MTTFTables

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

81 deg Celsius

101 deg Celsius

121 deg Celsius

FITs

1.48E-03

2.44E-02

3.04E-01

MTTF Hours

6.77E+11

4.09E+10

3.29E+09

Rth

-

-

Bias Conditions: Vd=3.0V, Id=135 mA

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

142 deg Celsius

162 deg Celsius

182 deg Celsius

FITs

2.43E+00

1.87E+01

1.20E+02

MTTF Hours

4.11E+08

5.36E+07

8.35E+06

Rth

-

-

Bias Conditions: Vd=5.5V, Id=270 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2006 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

November 2006 - Rev 03-Nov-06