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NE5517A Datasheet(PDF) 4 Page - NXP Semiconductors

Part # NE5517A
Description  Dual operational transconductance amplifier
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE5517A Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductor
Product data
NE5517/NE5517A/
AU5517
Dual operational transconductance amplifier
2002 Dec 06
4
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
VS
Supply voltage1
44 VDC or ±22
V
PD
Power dissipation,
Tamb = 25 °C (still air)2
NE5517N, NE5517AN
1500
mW
NE5517D, AU5517D
1125
mW
VIN
Differential input voltage
±5
V
ID
Diode bias current
2
mA
IABC
Amplifier bias current
2
mA
ISC
Output short-circuit duration
Indefinite
IOUT
Buffer output current3
20
mA
Tamb
Operating temperature range
NE5517N, NE5517AN
0
°C to +70 °C
°C
AU5517D
–40
°C to +125 °C
°C
VDC
DC input voltage
+VS to –VS
Tstg
Storage temperature range
–65
°C to +150 °C
°C
Tsld
Lead soldering temperature (10 sec max)
230
°C
NOTES:
1. For selections to a supply voltage above
±22 V, contact factory
2. The following derating factors should be applied above 25
°C
N package at 12.0 mW/
°C
D package at 9.0 mW/
°C
3. Buffer output current should be limited so as to not exceed package dissipation.


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