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NE5517A Datasheet(PDF) 4 Page - NXP Semiconductors |
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NE5517A Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page Philips Semiconductor Product data NE5517/NE5517A/ AU5517 Dual operational transconductance amplifier 2002 Dec 06 4 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT VS Supply voltage1 44 VDC or ±22 V PD Power dissipation, Tamb = 25 °C (still air)2 NE5517N, NE5517AN 1500 mW NE5517D, AU5517D 1125 mW VIN Differential input voltage ±5 V ID Diode bias current 2 mA IABC Amplifier bias current 2 mA ISC Output short-circuit duration Indefinite IOUT Buffer output current3 20 mA Tamb Operating temperature range NE5517N, NE5517AN 0 °C to +70 °C °C AU5517D –40 °C to +125 °C °C VDC DC input voltage +VS to –VS Tstg Storage temperature range –65 °C to +150 °C °C Tsld Lead soldering temperature (10 sec max) 230 °C NOTES: 1. For selections to a supply voltage above ±22 V, contact factory 2. The following derating factors should be applied above 25 °C N package at 12.0 mW/ °C D package at 9.0 mW/ °C 3. Buffer output current should be limited so as to not exceed package dissipation. |
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