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CNY171M Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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CNY171M Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 15 page  3 www.fairchildsemi.com CNY17X, CNY17FX, MOC810X Rev. 1.0.6 Electrical Characteristics (T A = 25°C Unless otherwise specified.) (1) Isolation Characteristics Note: * 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second ** Typical values at TA = 25°C Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ. Max. Units EMITTER VF Input Forward Voltage IF = 60mA CNY17FX/M CNY17X/M 1.0 1.35 1.65 V IF = 10mA MOC810X 1.0 1.15 1.50 CJ Capacitance VF = 0 V, f = 1.0MHz All 18 pF IR Reverse Leakage Current VR = 6 V All 0.001 10 µA DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.0mA, IF = 0 MOC8101/2/3/4/5 30 100 V MOC8106/7/8 CNY17F1/2/3/4/M CNY171/2/3/4/M 70 100 BVCBO Collector to Base IC = 10µA, IF = 0 CNY171/2/3/4/M 70 120 BVECO Emitter to Collector IE = 100µA, IF = 0 All 7 10 ICEO Leakage Current Collector to Emitter VCE = 10 V, IF = 0 All 1 50 nA ICBO Collector to Base VCB = 10 V, IF = 0 CNY171/2/3/4/M 20 nA CCE Capacitance Collector to Emitter VCE = 0, f = 1MHz All 8 pF CCB Collector to Base VCB = 0, f = 1MHz CNY171/2/3/4/M 20 pF CEB Emitter to Base VEB = 0, f = 1MHz CNY171/2/3/4/M 10 pF Symbol Characteristic Test Conditions Device Min. Typ.** Max. Units VISO Input-Output Isolation Voltage f = 60 Hz, t = 1 min., II-O ≤ 2µA (4) Black Package 5300 Vac(rms)* f = 60 Hz, t = 1 sec., II-O ≤ 2µA (4) ‘M’ White Package 7500 Vac(pk) RISO Isolation Resistance VI-O = 500 VDC (4) All 1011 Ω CISO Isolation Capacitance VI-O = Ø, f = 1MHz (4) Black Package 0.5 pF ‘M’ White Package 0.2 |
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Similar Description - CNY171M |
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