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CHV2710-QJ-0GA0 Datasheet(PDF) 1 Page - Mimix Broadband

Part # CHV2710-QJ-0GA0
Description  2.5 GHz InGaP HBT 5W Linear Power Amplifier
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Manufacturer  MIMIX [Mimix Broadband]
Direct Link  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

CHV2710-QJ-0GA0 Datasheet(HTML) 1 Page - Mimix Broadband

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Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CHV2710-QJ
2.5 GHz InGaP HBT
5W Linear Power Amplifier
October 2006 - Rev 23-Oct-06
Internal Pre-matching
Single Supply operation, 12V
Power Gain 9 dB
ESD Protection on board
Current Control for multiple applications
2.5% EVM @ 29 dBm avg power, 802.16 OFDM
signal format, PAR = 9 dB
Low Thermal Resistance
Ideal for WiMAX and WiBRO applications
RoHS compliant 6x6 QFN package
Features
General Description
The CHV2710 internally pre-matched power HBT device
provides 9 dB of gain, 2.5% EVM at 29 dBm output power
for 802.16 OFDM signal with a peak to average power ratio
of 9 dB. The device operates off a single supply voltage up
to 12V and includes internal bias circuitry to enable exact
setting of the quiescent current using an external Vcontrol.
This Vcontrol is non-unique voltage setting and the same
value can be used for each part depending on the required
Icq. The device is ideal for high linearity, high data rate
applications such as WiMAX and WiBRO. Internal
pre-matching facilitates a simplified external matching
approach and the highest in-band gain potential of the
device. The device operates with unique matching at each
of the popular WiMAX bands with the inherent
repeatability of an InGaP HBT process.
Absolute Maximum Ratings
Voltage Supply (Vcc)
Current (Icc)
Dissipated Power (Pdiss)
Input Power (Pin)
Storage Temperature (Tstg)
Channel Temperature (Tch)
Thermal Resistance (Rth)
Operating Backside Temperature (Tb)
4.5 (min) / 12 V (max)
2000 mA
18W
22 dBm
-60 to +150 ºC
175 ºC
5 ºC/W
-40 ºC to (see note 1)
Operation outside any of these limits can cause permanent damage.
(1) Caclulate maximum operating temperature Tmax using the
following formula: Tmax=175-(Pdiss [W] x 5) [C].
Electrical Characteristics (AmbientTemperatureT=25 oC,Vcc=12V)1
Parameter
Operating Frequency (f )
Quiescent Current2 (Icq)
Power Gain @ Pout = 29 dBm (Gps)
Current @ 29 dBm (Icc)
Output Power @ EVM = 2.5%3
Adjacent Channel Power Ratio @ Pout = 29 dBm4 (ACPR)
Input Reflection Coefficient (S11)
Noise Figure (NF)
Units
GHz
mA
dB
mA
dBm
dBc
dB
dB
Min.
2.5
-
-
-
29
-
Typ.
2.6
730
9
770
-
-45
-12
4
Max.
2.7
760
-
800
-
-
Min.
2.3
-
-
29
-
Typ.
2.35
730
10
770
-
-45
-12
4
Max.
2.4
760
-
800
-
-
1. Data measured in a Mimix matched connectorized fixture.
2. Quiescent current depends on Vcc
3. Using an 802.1 6d OFDM signal format with PAR=9 dB
4. Using 3 GPP WCDMA signal, PAR = 9.17 dB
CHV2710-QJ-0G00
(WiMAX 2.5 GHz)
CHV2710-QJ-0GA0
(WiBRO 2.3 GHz)


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