©2002 Fairchild Semiconductor Corporation

Rev. B1, August 2002

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

-32

V

Collector-Emitter Voltage

-32

V

Emitter-Base Voltage

-5.0

V

Collector current

- Continuous

-500

mA

Junction and Storage Temperature

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

Collector-Base Breakdown Voltage

-32

V

Collector-Emitter Breakdown Voltage

-32

V

Collector-Emitter Breakdown Voltage

-32

V

Emitter-Base Breakdown Voltage

-5.0

V

Collector Cutoff Current

-100

-10

nA

µA

On Characteristics

DC Current Gain

215

500

Collector-Emitter Saturation Voltage

-0.3

V

Base-Emitter On Voltage

-0.6

-0.7

V

Small Signal Characteristics

NF

Noise Figure

10

dB

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

350

2.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

357

°C/W

BCW30

PNP General Purpose Amplifier

• This device is designed for general purpose medium power amplifiers

and switches requiring collector currents to 300mA.

• Sourced from process 68.

1. Base 2. Emitter 3. Collector

1

2

3

SOT-23

Mark: C2