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HIP1016 Datasheet(PDF) 3 Page - Intersil Corporation |
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HIP1016 Datasheet(HTML) 3 Page - Intersil Corporation |
3 / 9 page 3 Absolute Maximum Ratings TA = 25oC Thermal Information VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16V GATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD+8V ISEN, PGOOD, PWRON, CTIM, ISET. . . . . . . . -0.3V to VDD + 0.3V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5kV Operating Conditions VDD Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . +12v+/-15% Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . . . . 0 oC to 85oC Thermal Resistance (Typical, Note 1) θJA (oC/W) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. (See Tech Brief, #TB379.1 for details.) 2. All voltages are relative to GND, unless otherwise specified. Electrical Specifications VDD = 12V, TA = TJ = 0 oC to 85oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ISET Current Source IISET 18.5 20 21.5 µA Current Limit Amp Offset Voltage VISET - VISEN -6 0 6 mV Current Limit Time-Out Threshold Voltage CTIM_Vth CTIM Voltage 1.3 1.8 2.3 V GATE Response Time To Severe Overcurrent pd_woc_amp VGATE to 10.8V - 100 - ns GATE Response Time to Overcurrent pd_oc_amp VGATE to 10.8V 600 ns GATE Turn-On Current IGATE VGATE to = 6V 8.4 10 11.6 µA GATE Pull down Current OC_GATE_I_4V Overcurrent 45 75 mA GATE Pull down Current WOC_GATE_I_4V Severe Overcurrent 0.5 0.8 1.5 A HIP1015 Undervoltage Threshold 12VUV_VTH 9.2 9.6 10 V HIP1015 Undervoltage Disabled 12VUV_VTH_dis VDD+1.9V VDD+2.5V V HIP1015 GATE High Voltage 12VG GATE Voltage VDD+4.5V VDD+5V - V HIP1016 Undervoltage Threshold 5VUV_VTH 4.0 4.35 4.5 V HIP1016 Undervoltage Disabled 5VUV_VTH_dis VDD-3V VDD-2.5V V HIP1016 GATE High Voltage 5VG GATE Voltage VDD-1.5V VDD -V VDD Supply Current IVDD -3 5 mA VDD POR Rising Threshold VDD_POR_L2H VDD Low to High 7.8 8.4 9 V VDD POR Falling Threshold VDD_POR_H2L VDD High to Low 7.5 8.1 8.7 V VDD POR Threshold Hysteresis VDD_POR_HYS VDD_POR_L2H - VDD_POR_H2L 0.1 0.3 0.6 V PWRON Pull-up Voltage PWRN_V PWRON Pin Open 2.7 3.2 - V PWRON Rising Threshold PWR_Vth 1.4 1.7 2.0 V PWRON Hysteresis PWR_hys 130 170 250 mV PWRON Pull-Up Current PWRN_I 9 17 25 µA CTIM Charging Current CTIM_ichg0 VCTIM = 0V 16 20 23 µA CTIM Fault pull-up Current 16 20 23 mA HIP1015 ISEN Current ISEN_5V_I 41 72 88 µA HIP1016 ISEN Current ISEN_5V_I 100 145 170 µA HIP1015,HIP1016 |
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