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MGFC5216 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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MGFC5216 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MITSUBISHI ELECTRIC PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. as of July '98 MGFC5216 Q-Band 4-Stage Driver Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µM) RFin RFout Vg1 Vg2 Vg3 Vg4 Vd1 Vd2 Vd3 Vd4 GND RFin RFout X=1.99 mm Y=0.83 mm Bond Pad Dimension=0.07 x 0.15 mm2 (RF) 0.1 x 0.1 mm2 (DC) (165.0, 125.5) (515.0, 130.0) (965.0, 130.0) (1350.0, 130.0) (1695.0, 130.0) (270.0, 700.0) (630.0, 700.0) (990.0, 700.0) (1395.0, 700.0) (1875.0, 445.0) (115.0, 445.0) |
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Similar Description - MGFC5216 |
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