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AM49LV128BMAH15NT Datasheet(PDF) 3 Page - SPANSION

Part # AM49LV128BMAH15NT
Description  128 Megabit (8 M x 16-Bit) MirrorBit??Uniform Sector Flash Memory and 32 Mbit (2 M x 16-Bit)
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
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AM49LV128BMAH15NT Datasheet(HTML) 3 Page - SPANSION

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SUPPLEMENT
Publication Number: 31022_00
Rev: A
Amendment:6
Am49LV128BM
Stacked Multi-Chip Package (MCP)
128 Megabit (8 M x 16-Bit) MirrorBit
™ Uniform Sector Flash Memory and
32 Mbit (2 M x 16-Bit) pseudo-static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 0.23 µm MirrorBit process
technology
SecSi
™ (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked by the customer
Flexible sector architecture
— Two hundred fifty-six 32 Kword sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
power supply flash, and superior inadvertent write
protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
High performance
— As fast as 105 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 15 µs typical write buffer word programming time: 16-
word write buffer reduces overall programming time
for multiple-word updates
— 4-word page read buffer
— 16-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package option
—64-ball FBGA
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word or byte programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Group Unprotect: VID-level method
of changing code in locked sector groups
— WP#/ACC input accelerates programming time
(when high voltage is applied) for greater throughput
during system production. Protects last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
PSRAM FEATURES
Asynchronous SRAM Interface
Fast Access Time
—tCE = tAA = 65 ns max
Low Voltage Operating Condition
—VDD = 2.7 to + 3.1 V
Byte Control by LB# and UB#


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