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MPS3906 Datasheet(PDF) 3 Page - NXP Semiconductors |
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MPS3906 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 12 3 Philips Semiconductors Product specification PNP switching transistor MPS3906 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −−50 nA IEBO emitter cut-off current IE = 0; VEB = −5V −−50 nA hFE DC current gain VCE = −1 V; note 1 IC = −0.1 mA 60 − IC = −1mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 −−250 mV IC = −50 mA; IB = −5 mA; note 1 −−400 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA; note 1 −650 −850 mV IC = −50 mA; IB = −5 mA; note 1 −−950 mV Cc collector capacitance IE =ie = 0; VCB = −5V; 100 kHz ≤ f ≤ 1 MHz − 5pF Ce emitter capacitance IC =ic = 0; VEB = −0.5 V; 100 kHz ≤ f ≤ 1 MHz − 15 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 150 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS =1kΩ; f = 10 Hz to 15.7 kHz − 4dB Switching times (between 10% and 90% levels); (see Fig.2) ton turn-on time ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA; VCC = −3 V; VBB = 1.9 V − 100 ns td delay time − 50 ns tr rise time − 50 ns toff turn-off time − 700 ns ts storage time − 600 ns tf fall time − 100 ns |
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Similar Description - MPS3906 |
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