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2N5830 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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2N5830 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 5.0 V ICBO Collector Cutoff Current VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, TA = 100 °C 50 25 nA µA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC = 10 mA VCE = 5.0 V, IC = 50 mA 60 80 80 500 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.15 0.2 0.25 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.8 1.0 1.0 V V V VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 1.0 mA 0.8 V SMALL SIGNAL CHARACTERISTICS Ccb Output Capacitance VCB = 10 V, f = 1.0 MHz 4.0 pF hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V, f = 100 MHz 1.0 5.0 hie Input Impedance IC = 1.0 mA, VCE = 10 V, 6.0 K Ω hoe Output Admittance f = 1.0 kHz 40 µmho hfe Small-Signal Current Gain 60 *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% |
Similar Part No. - 2N5830_01 |
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Similar Description - 2N5830_01 |
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