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2N5457 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N5457 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page G D S 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage - 25 V IGF Forward Gate Current 10 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. G S D TO-92 SOT-23 Mark: 6D / 61S / 6L *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation NOTE: Source & Drain are interchangeable Symbol Characteristic Max Units 2N5457-5459 *MMBF5457-5459 PD Total Device Dissipation Derate above 25 °C 625 5.0 350 2.8 mW mW/ °C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W |
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