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2N5307 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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2N5307 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.2 A TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C 2N5307 NPN General Purpose Amplifier • This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics. TO-92 1. Emitter 2. Collector 3. Base 1 |
Similar Part No. - 2N5307_02 |
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Similar Description - 2N5307_02 |
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