This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 26573

Rev: B Amendment/+2

Issue Date: December 13, 2005

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29PDL640G

64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only,

Simultaneous Read/Write Flash Memory with Enhanced

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

64 Mbit Page Mode device

— Page size of 8 words: Fast page read access from

random locations within the page

Single power supply operation

— Full Voltage range: 2.7 to 3.1 volt read, erase, and

program operations for battery-powered applications

Simultaneous Read/Write Operation

— Data can be continuously read from one bank while

executing erase/program functions in another bank

— Zero latency switching from write to read operations

FlexBank Architecture

— 4 separate banks, with up to two simultaneous

operations per device

— Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)

— Bank B: 24 Mbit (32 Kw x 48)

— Bank C: 24 Mbit (32 Kw x 48)

— Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)

— Output voltage generated and input voltages tolerated

on all control inputs and I/Os is determined by the

voltage on the V

— Up to 128 words accessible through a command

sequence

Both top and bottom boot blocks in one device

Manufactured on 0.17 µm process technology

20-year data retention at 125°C

Minimum 1 million erase cycle guarantee per sector

PERFORMANCE CHARACTERISTICS

High Performance

— Page access times as fast as 25 ns

— Random access times as fast as 65 ns

Power consumption (typical values at 10 MHz)

— 25 mA active read current

— 15 mA program/erase current

— 0.2 µA typical standby mode current

SOFTWARE FEATURES

Software command-set compatible with JEDEC 42.4

standard

— Backward compatible with Am29F and Am29LV

families

CFI (Common Flash Interface) complaint

— Provides device-specific information to the system,

allowing host software to easily reconfigure for

different Flash devices

Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or

program operations in other sectors of same bank

Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

HARDWARE FEATURES

Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or

erase cycle completion

Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array

data

WP#/ACC (Write Protect/Accelerate) input

regardless of sector protect/unprotect status

—At V

setting

Persistent Sector Protection

— A command sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector

— Sectors can be locked and unlocked in-system at V

CC

level

Password Sector Protection

— A sophisticated sector protection method to lock

combinations of individual sectors and sector groups

to prevent program or erase operations within that

sector using a user-defined 64-bit password

Package options

— 63-ball Fine-pitch BGA

— 80-ball Fine-pitch BGA

This product has been retired and is not available for designs. For new and current designs, S29PL064J supersedes Am29PDL640G and is the factory-recommended migration path. Please

refer to the S29PL064J datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.