AM42BDS640AGTD8IS datasheet(2/72 Pages) AMD

Part #	AM42BDS640AGTD8IS

Description	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM

Download	72 Pages

Scroll/Zoom	100%

Manufacturer	AMD [Advanced Micro Devices]

Direct Link	http://www.amd.com

Logo

2 / 72 page

PRELIMINARY

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 26445

Rev: B Amendment/0

Issue Date: November 1, 2002

Refer to AMD’s Website (www.amd.com) for the latest information.

Am42BDS640AG

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation,

Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM

DISTINCTIVE CHARACTERISTICS

MCP Features

■ Power supply voltage of 1.65 to 1.95 volt

■ High performance

— Access time as fast as 70 ns

■ Package

— 93-Ball FBGA

■ Operating Temperature

— –40°C to +85°C

Flash Memory Features

ARCHITECTURAL ADVANTAGES

■ Single 1.8 volt read, program and erase (1.65 to 1.95 volt)

■ Manufactured on 0.17 µm process technology

■ Simultaneous Read/Write operation

— Data can be continuously read from one bank while

executing erase/program functions in other bank

— Zero latency between read and write operations

— Four bank architecture: 16Mb/16Mb/16Mb/16Mb

■ Programmable Burst Interface

— 2 Modes of Burst Read Operation

— Linear Burst: 8, 16, and 32 words with wrap-around

— Continuous Sequential Burst

■ Sector Architecture

— Eight 8 Kword sectors and one hundred twenty-six 32

Kword sectors

— Banks A and D each contain four 8 Kword sectors and

thirty-one 32 Kword sectors; Banks B and C each contain

thirty-two 32 Kword sectors

— Eight 8 Kword boot sectors, four at the top of the address

range, and four at the bottom of the address range

■ Minimum 1 million erase cycle guarantee per sector

■ 20-year data retention at 125°C

PERFORMANCE CHARCTERISTICS

■ Read access times at 54/40 MHz

— Burst access times of 13.5/20 ns @ 30 pF at industrial

temperature range

— Asynchronous random access times of 70 ns (at 30 pF)

— Synchronous latency of 87.5/95 ns

■ Power dissipation (typical values, C

L = 30 pF)

— Burst Mode Read: 10 mA

— Simultaneous Operation: 25 mA

— Program/Erase: 15 mA

— Standby mode: 0.2 µA

HARDWARE FEATURES

■ Software command sector locking

■ Handshaking: host monitors operations via RDY output

■ Hardware reset input (RESET#)

■ WP# input

— Write protect (WP#) function protects sectors 0, 1 (bottom

boot) or sectors 132 and 133 (top boot), regardless of sector

protect status

■ ACC input: Acceleration function reduces programming

time; all sectors locked when ACC = V

IL

■ CMOS compatible inputs, CMOS compatible outputs

■ Low V

CC write inhibit

SOFTWARE FEATURES

■ Supports Common Flash Memory Interface (CFI)

■ Software command set compatible with JEDEC 42.4

standards

■ Data# Polling and toggle bits

■ Erase Suspend/Resume

— Suspends or resumes an erase operation in one sector to

read data from, or program data to, other sectors

■ Unlock Bypass Program command

— Reduces overall programming time when issuing multiple

program command sequences

SRAM Features

■ Power dissipation

— Operating: 3 mA maximum

— Standby: 15 µA maximum

■ CE1s# and CE2s Chip Select

■ Power down features using CE1s# and CE2s

■ Data retention supply voltage: 1.0 to 2.2 volt

■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)

Similar Part No. - AM42BDS640AGTD8IS

Manufacturer	Part #	Datasheet	Description
SPANSION	AM42BDS640AGTD8IS	1Mb / 72P	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

More results

Similar Description - AM42BDS640AGTD8IS

Manufacturer	Part #	Datasheet	Description
SPANSION	AM42DL640AH	1,011Kb / 60P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
	AM49PDL640AG	954Kb / 69P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
	AM49DL640AH	995Kb / 63P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
Advanced Micro Devices	AM42DL640AG	916Kb / 62P	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
Advanced Micro Devices	AM50DL128CG	888Kb / 63P	64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and 64 Mbit (4 M x 16-Bit) Pseudo Static RAM
SPANSION	AM49PDL127AH	1Mb / 82P	128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM
Advanced Micro Devices	AM42DL6404G	1,022Kb / 61P	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM
SPANSION	AM29BDS640G	899Kb / 65P	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Advanced Micro Devices	AM29BDS643D	693Kb / 46P	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
Advanced Micro Devices	AM29BDS643G	714Kb / 49P	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

More results

AM42BDS640AGTD8IS Datasheet(PDF) 2 Page - Advanced Micro Devices

AM42BDS640AGTD8IS Datasheet(HTML) 2 Page - Advanced Micro Devices

Similar Part No. - AM42BDS640AGTD8IS

Similar Description - AM42BDS640AGTD8IS

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72

Datasheet Download

Link URL