DMN5L06DWK datasheet(3/5 Pages) DIODES

Part #	DMN5L06DWK

Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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DS30930 Rev. 2 - 2

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DMN5L06DWK

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T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

ch

0

-55

-25

0

25

50

75

100

125

150

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V

= 10V

I= 1mA

Pulsed

DS

D

0.1

I

DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

D,

1

10

0.001

0.01

0.1

1

V

= 10V

Pulsed

GS

T = 150 C

A

°

T= -55 C

A

°

T= -25 C

A

°

T= 25 C

A

°

T= 125 C

A

°

T= 85 C

A

°

1

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

D

10

0.1

1

0.001

0.01

0.1

V= 5V

Pulsed

GS

T= -55 C

A

°

T= 150 C

A

°

T= -25 C

A

°

T= 25 C

A

°

T = 125 C

A

°

T= 85 C

A

°

V

GATE SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

GS,

0

20

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2

4

6

8

10

12

14

16

18

T= 25 C

Pulsed

A

°

I = 140mA

D

I = 280mA

D

T , CHANNEL TEMPERATURE ( C)

Fig. 7

ch

°

Static Drain-Source On-State Resistance

vs. Channel Temperature

-50

-25

0

25

50

75

100

125 150

0

1

2

3

V

= 10V

Pulsed

GS

I = 280mA

D

I = 140mA

D

0.001

0.01

0.1

0.5

0

1

V,

Fig. 8 Reverse Drain Current

vs. Source-Drain Voltage

SD SOURCE-DRAIN VOLTAGE (V)

V= 0V

Pulsed

GS

T= -55 C

A

°

T= 150 C

A

°

T= -25 C

A

°

T= 25 C

A

°

T= 85 C

A

°

T= 125 C

A

°

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