RB160L-40

Diodes

Rev.B

1/3

Schottky barrier diode

RB160L-40

Applications

General rectification

Features

1) Small power mold type. (PMDS)

3) High reliability.

Construction

Silicon epitaxial planar

External dimensions

(Unit : mm)

Land size figure

(Unit : mm)

Structure

Taping specification

s (Unit : mm)

Absolute maximum ratings

(Ta=25 C)

Electrical characteristics

(Ta=25 C)

Sym bol

Unit

V

V

Io

A

A

Tj

Ts tg

Junction tem perature

torage tem perature

70

150

1)Tc=90 m ax Mounted on epoxy board. 180 Half s ine wave

-40 to +150

orward current s urge peak (60Hz 1cyc)

Param eter

evers e voltage (repetitive peak)

evers e voltage (DC)

verage rectified forward current

Lim its

40

1

40

S

(*

F

R

R

A

Sym bol

Min.

Typ.

Max.

Unit

Conditions

Forward v

-

-

0.55

V

-

10

μA

-

100

μA

everse current

Param eter

oltage

R