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AM29LV641MH Datasheet(PDF) 3 Page - Advanced Micro Devices

Part # AM29LV641MH
Description  64 Megabit (4 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV641MH Datasheet(HTML) 3 Page - Advanced Micro Devices

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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Refer to AMD’s Website (www.amd.com) for the latest information.
Publication# 25261
Rev: B
Amendment/+10
Issue Date: December 21, 2005
Am29LV641MH/L
64 Megabit (4 M x 16-Bit) MirrorBit
™ 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O
™ Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Single power supply operation
— 3 V for read, erase, and program operations
VersatileI/O
™ control
— Device generates data output voltages and tolerates
data input voltages on CE# and the DQ inputs/outputs
as determined by the voltage on the V
IO pin; operates
from 1.65 to 3.6 V
Manufactured on 0.23 µm MirrorBit process
technology
SecSi
™ (Secured Silicon) Sector region
— 128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number,
accessible through a command sequence
— May be programmed and locked at the factory or by
the customer
Flexible sector architecture
— One hundred twenty-eight 32 Kword sectors
Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
Minimum 100,000 erase cycle guarantee per sector
20-year data retention at 125
°C
PERFORMANCE CHARACTERISTICS
High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 µs typical effective write buffer word programming
time: 16-word write buffer reduces overall
programming time for multiple-word updates
— 4-word page read buffer
— 16-word write buffer
Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 48-pin TSOP
SOFTWARE & HARDWARE FEATURES
Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID-level method of
changing code in locked sectors
— ACC (high voltage) input accelerates programming
time for higher throughput during system production
— Write Protect input (WP#) protects first or last sector
regardless of sector protection settings
— Hardware reset input (RESET#) resets device
This product has been retired and is not available for designs. For new and current designs, S29GL064A supersedes Am29LV641M H/L and is the factory-recommended migration path.
Please refer to the S29GL064A datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.


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