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AM29LV400BB-70DWC1 Datasheet(PDF) 11 Page - Advanced Micro Devices |
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AM29LV400BB-70DWC1 Datasheet(HTML) 11 Page - Advanced Micro Devices |
11 / 14 page Am29LV400B Known Good Die 9 SU PP L E ME NT PHYSICAL SPECIFICATIONS Die dimensions . . . . . . . . . . . . . . 185 mils x 140 mils . . . . . . . . . . . . . . . . . . . . . . . . . . 4.70 mm x 3.56 mm Die Thickness. . . . . . . . . . . . . . . . . . . . . . . . . .500 µm Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm Pad Area Free of Passivation . . . . . . . . . .13.99 mils2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2 Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43 Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal, may be grounded (optional) Passivation . . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride DC OPERATING CONDITIONS VCC (Supply Voltage) . . . . . . . . . . . . . . . 2.7 V to 3.6 V Operating Temperature Commercial . . . . . . . . . . . . . . . . . . . 0 °C to +70°C Industrial . . . . . . . . . . . . . . . . . . . –40 °C to +85°C Extended . . . . . . . . . . . . . . . . . . –55 °C to +125°C MANUFACTURING INFORMATION Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia Manufacturing ID (Top Boot) . . . . . . . . . . . . . 98F03AK (Bottom Boot). . . . . . . . 98F03ABK Preparation for Shipment . . . . . . . . Penang, Malaysia Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SPECIAL HANDLING INSTRUCTIONS Processing Do not expose KGD products to ultraviolet light or process them at temperatures greater than 250 °C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, AMD recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Store at a maximum temperature of 30 °C in a nitrogen- purged cabinet or vacuum-sealed bag. Observe all standard ESD handling procedures. TEST CONDITIONS Table 1. Test Specifications Test Condition 60R, 70, 80 90, 120 Unit Output Load 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 100 pF Input Rise and Fall Times 5 ns Input Pulse Levels 0.0–3.0 V 2.7 k Ω CL 6.2 k Ω 3.3 V Device Under Test Figure 1. Test Setup Note:Diodes are IN3064 or equivalent Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Test Condition 60R, 70, 80 90, 120 Unit |
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