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LLE18150X Datasheet(PDF) 6 Page - NXP Semiconductors |
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LLE18150X Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 9 page September 1994 6 Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LLE18150X List of components (see Figs 3 and 4). Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. COMPONENT DESCRIPTION VALUE ORDERING INFORMATION TR1 transistor, BDT91 or equivalent C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1 C5, C6 feedthrough bypass capacitor 1500 pF Erie 1250-003 C7 electrolytic capacitor 10 µF, >30 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 4 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 k Ω R1 resistor 100 Ω, 0.25 W R2 resistor 10 k Ω, 0.25 W R3 resistor 56 Ω, 0.25 W F1 ferrite bead Philips tube, 12NC = 4330 030 43081 4.2 x 2.2 x 3.2 mm (4B1) Fig.4 Class AB bias circuit. handbook, full pagewidth MEA600 C5 C6 L2 DUT L1 C7 R3 D1 D2 P1 F1 R2 R1 TR1 VCC BIAS CIRCUIT PREMATCHING TEST CIRCUIT |
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