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BSS8402DW-7-F Datasheet(PDF) 2 Page - Diodes Incorporated

Part # BSS8402DW-7-F
Description  COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BSS8402DW-7-F Datasheet(HTML) 2 Page - Diodes Incorporated

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DS30380 Rev. 8 - 2
2 of 5
BSS8402DW
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
BVDSS
60
70
¾
V
VGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
¾
¾
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
¾
¾
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
1.0
¾
2.5
V
VDS = VGS, ID = 250mA
Static Drain-Source On-Resistance
@ Tj = 25°C
@ Tj = 125°C
RDS (ON)
¾
3.2
4.4
7.5
13.5
W
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
¾
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
¾
¾
mS
VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
¾
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
¾
11
25
pF
Reverse Transfer Capacitance
Crss
¾
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
¾
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150W, VGEN = 10V,
RGEN = 25W
Turn-Off Delay Time
tD(OFF)
¾
11
20
ns
Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
BVDSS
-50
¾
¾
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
¾
¾
¾
¾
¾
¾
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage
IGSS
¾
¾
±
10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
-0.8
¾
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS (ON)
¾
¾
10
W
VGS = -5V, ID = -0.100A
Forward Transconductance
gFS
.05
¾
¾
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
¾
¾
45
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
12
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
¾
10
¾
ns
VDD = -30V, ID = -0.27A,
RGEN = 50W, VGS = -10V
Turn-Off Delay Time
tD(OFF)
¾
18
¾
ns
Electrical Characteristics P-CHANNEL - Q2, BSS84 Section
Note: 3. Short duration test pulse used to minimize self-heating effect.
@ TA = 25°C unless otherwise specified


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