1997 Feb 18

2

Philips Semiconductors

Product specification

NPN microwave power transistor

LEE1015T

FEATURES

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Gold metallization realizes very good stability of the

characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance.

APPLICATIONS

Intended for use in common emitter, class A power

amplifiers for applications that require a high level of

linearity.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in

a SOT122A metal ceramic package.

PINNING - SOT122A

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

Fig.1 Simplified outline and symbol.

Marking code: 1015T.

handbook, halfpage

2

3

1

4

MAM229

e

c

b

QUICK REFERENCE DATA

Note

1. The stated intermodulation distortion level is referred to the total output power of 18.25 dBm, which corresponds to

MODE OF OPERATION

f

(MHz)

(V)

(mA)

(W)

(dB)

(dB)

Class A (CW)

860

20

140

>1

>13

<

−57 note 1

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All

persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15