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LCE2009S Datasheet(PDF) 4 Page - NXP Semiconductors |
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LCE2009S Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 1997 Mar 03 4 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S; LCE2009S Fig.5 DC SOAR; LBE2009S, LCE2009S handbook, halfpage 103 102 10 1 MGD990 10 20 40 IC (mA) 102 (1) (2) (3) VCE (V) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 100 Ω. (3) Second breakdown limit (independant of temperature). Fig.6 Power dissipation derating as a function of mounting-base temperature; LBE2009S, LCE2009S. handbook, halfpage −50 0 P tot (W) 200 Tmb ( oC) 4 3 1 0 2 50 100 150 MGD991 THERMAL CHARACTERISTICS Note 1. See “ Mounting recommendations in the General part of handbook SC15”. SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj =75 °C; note 1 LBE2003S 65 K/W LBE2009S; LCE2009S 36 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj =75 °C; note 1 1.5 K/W LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 |
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